AOH3106 100v n-channel mosfet general description product summary v ds i d (at v gs =10v) 2a r ds(on) (at v gs =10v) < 360m w r ds(on) (at v gs =4.5v) < 385m w symbol v ds parameter absolute maximum ratings t a =25c unless otherwise noted the AOH3106 combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) . this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and led backligh ting. 100v drain-source voltage 100 v maximum units g ds sot223 top view bottom view d s g d d g d s v gs i dm i as e as t j , t stg symbol t 10s steady-state steady-state r q jl pulsed drain current c c thermal characteristics power dissipation b p d t a =25c w 3.1 2 t a =70c junction and storage temperature range -55 to 150 avalanche current c 5 a avalanche energy l=100uh c t a =25c t a =70c continuous drain current g a i d 2 1.5 7 v 20 gate-source voltage maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 30 75 40 60 c/w r q ja 33 40 maximum junction-to-ambient a 1.3 mj units parameter typ max rev 0: nov 2012 www.aosmd.com page 1 of 5
AOH3106 symbol min typ max units bv dss 100 v v ds =100v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.0 1.5 2.0 v i d(on) 7 a 295.5 360 t j =125c 548 665 306.5 385 m w g fs 4.5 s v sd 0.78 1 v i s 2 a c iss 185 pf c oss 19 pf c rss 8 pf r g 0.6 1.2 1.8 w q g (10v) 4.8 10 nc q g (4.5v) 2.5 6 nc q gs 0.5 nc q gd 1.4 nc t d(on) 3.5 ns t 2.8 ns maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters v =10v, v =50v, r =25 w , reverse transfer capacitance v gs =0v, v ds =50v, f=1mhz switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =50v, i d =2a gate source charge gate drain charge total gate charge turn-on rise time zero gate voltage drain current gate-body leakage current m w i s =1a,v gs =0v v ds =5v, i d =2a v gs =4.5v, i d =1.5a forward transconductance diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =2a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs =20v t r 2.8 ns t d(off) 16 ns t f 2.5 ns t rr 17 ns q rr 14.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. v gs =10v, v ds =50v, r l =25 w , r gen =3 w body diode reverse recovery charge i f =2a, di/dt=100a/ m s turn-on rise time turn-off delaytime i f =2a, di/dt=100a/ m s turn-off fall time body diode reverse recovery time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedance which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating g. the maximum current rating is package limited. rev 0: nov 2012 www.aosmd.com page 2 of 5
AOH3106 typical electrical and thermal characteristics 17 52 10 0 18 0 1 2 3 4 0 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 200 250 300 350 400 0 0.5 1 1.5 2 2.5 3 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =1.5a v gs =10v i d =2a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 1 2 3 4 5 6 7 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3.0v 3.5v 5v 4v 10v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 0 100 200 300 400 500 600 700 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =2a 25 c 125 c rev 0: nov 2012 www.aosmd.com page 3 of 5
AOH3106 typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 350 0 10 20 30 40 50 60 70 80 90 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =50v i d =2a 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased 100 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 10ms 10 m s ambient (note f) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r q ja =75 c/w rev 0: nov 2012 www.aosmd.com page 4 of 5
AOH3106 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d u t v gs d iode r ecovery t est c ircuit & w aveform s v ds + rr q = - idt - + v d c d u t v d d v g s v ds v g s r l r g v gs v d s 1 0% 90 % r es istiv e s w itch ing t e st c ircu it & w a ve fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff ig v gs - + vd c l v ds isd isd v ds - i f di/dt i r m v dd v dd t rr rev 0: nov 2012 www.aosmd.com page 5 of 5
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